Flat band voltage control on low Vt metal-gate/high-j CMOSFETs with small EOT (Invited Paper)
نویسندگان
چکیده
The unwanted high threshold voltage (Vt) is the major challenge for metal-gate/high-j CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high Vt issue that is due to flat-band voltage (Vfb) roll-off at smaller EOT. A mechanism of charged oxygen vacancies formed by interface reaction was proposed to explain the Vfb roll-off effect. This interface reaction can be decreased by inserting a thin interfacial SiON and using novel low temperature process. The self-aligned and gate-first metal-gate/ high-j CMOSFETs using these methods have achieved low Vt and good control of Vfb roll-off at small 0.6– 1.2 nm EOT. Crown Copyright 2009 Published by Elsevier B.V. All rights reserved.
منابع مشابه
Band bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کاملBand bending engineering in p-i-n gate all around Carbon nanotube field effect transistors by multi-segment gate
The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...
متن کاملQuantum Mechanical Simulation for Ultra-thin High-k Gate Dielectrics Metal Oxide Semiconductor Field Effect Transistors
High-k dielectric materials are being considered as replacement for SiO2 as the gate dielectric while retaining the low equivalent oxide thickness (EOT) required next generation metal oxide semiconductor field effect transistors (MOSFETs). In this paper, we simulate the capacitance – voltage (C-V) of n-type MOSFET devices with different high-k dielectric insulator numerically. According to the ...
متن کاملNBTI degradation effect on advanced-process 45 nm high-k PMOSFETs with geometric and process variations
Article history: Available online xxxx a b s t r a c t Negative bias temperature instability (NBTI) has become an important reliability concern for nano-scaled complementary metal oxide (CMOS) devices. This paper presents the effect of NBTI for a 45 nm advanced-process high-k dielectric with metal gate PMOS transistor. The device had incorporated advanced-process flow steps such as stress engin...
متن کاملInAs Quantum - Well MOSFET ( L g = 100 nm ) for Logic and Microwave Applications
We report a recessed quantum-well (QW) InAs MOSFET with enhancement-mode operation down to 100 nm gate lengths. The device features a composite insulator consisting of an MBE-grown 2 nm InP barrier plus an ex-situ ALD-deposited 3 nm Al2O3 for an estimated EOT of 2 nm. Our devices exhibit excellent short-channel effects down to the Lg = 100 nm regime. InAs QW MOSFETs exhibit record transconducta...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2009